Spin filter bottom spin valve head with continuous spacer exchange bias

ABSTRACT

A high performance specular free layer bottom spin valve is disclosed. This structure made up the following layers: NiCr/MnPt/CoFe/Ru/CoFe/Cu/free layer/Cu/Ta or TaO/Al 2 O 3 . A key feature is that the free layer is made of a very thin CoFe/NiFe composite layer. Experimental data confirming the effectiveness of this structure is provided, together with a method for manufacturing it and, additionally, its longitudinal bias leads.

FIELD OF THE INVENTION

[0001] The invention relates to the general field of GMR recording headsfor magnetic disk systems with particular reference to design of thefree layer.

BACKGROUND OF THE INVENTION

[0002] Read-write heads for magnetic disk systems have undergonesubstantial development during the last few years. In particular, oldersystems in which a single device was used for both reading and writing,have given way to configurations in which the two functions areperformed by different structures. An example of such a read-write headis schematically illustrated in FIG. 1. The magnetic field that ‘writes’a bit at the surface of recording medium 15 is generated by a flat coil,two of whose windings 14 can be seen in the figure. The magnetic fluxgenerated by the flat coil is concentrated within pole pieces 12 and 13which, while being connected at a point beyond the top edge of thefigure, are separated by small gap 16. Thus, most of the magnetic fluxgenerated by the flat coil passes across this gap with fringing fieldsextending out for a short distance where the field is still powerfulenough to magnetize a small portion of recoding medium 15.

[0003] The present invention is directed towards the design of readelement 20 which can be seen to be a thin slice of material locatedbetween magnetic shields 11 and 12 (12 doing double duty as a polepiece, as just discussed). The principle governing the operation of readsensor 20 is the change of resistivity of certain materials in thepresence of a magnetic field (magneto-resistance). Most magneticmaterials exhibit anisotropic behavior in that they have a preferreddirection along which they are most easily magnetized (known as the easyaxis). The magneto-resistance effect manifests itself as a decrease inresistivity when the material is magnetized in a direction perpendicularto the easy axis, said decrease being reduced to zero when magnetizationis along the easy axis. Thus, any magnetic field that changes thedirection of magnetization in a magneto-resistive material can bedetected as a change in resistance.

[0004] It is widely known that the magneto-resistance effect can besignificantly increased by means of a structure known as a spin valve.The resulting increase (known as Giant magneto-resistance or GMR)derives from the fact that electrons in a magnetized solid are subjectto significantly less scattering by the lattice when their ownmagnetization vectors (due to spin) are parallel (as opposed toanti-parallel) to the direction of magnetization of the solid as awhole.

[0005] The key elements of a spin valve structure are shown in FIG. 2.In addition to a seed layer 22 on a substrate 21 and a topmost cap layer27, these key elements are two magnetic layers 24 and 26, separated by anon-magnetic layer 25. The thickness of layer 25 is chosen so thatlayers 24 and 26 are sufficiently far apart for exchange effects to benegligible (i.e. the layers do not influence each other's magneticbehavior at the atomic level) but are close enough to be within the meanfree path of conduction electrons in the material. If, now, layers 24and 26 are magnetized in opposite directions and a current is passedthough them along the direction of magnetization (such as direction 28in the figure), half the electrons in each layer will be subject toincreased scattering while half will be unaffected (to a firstapproximation). Furthermore, only the unaffected electrons will havemean free paths long enough for them to have a high probability ofcrossing over from 24 to 26 (or vice versa). However, once theseelectrons ‘switch sides’, they are immediately subject to increasedscattering, thereby becoming unlikely to return to their original side,the overall result being a significant increase in the resistance of theentire structure.

[0006] In order to make use of the GMR effect, the direction ofmagnetization of one of the layers 24 and 26 is permanently fixed, orpinned. In FIG. 2 it is layer 24 that is pinned. Pinning is achieved byfirst magnetizing the layer (by depositing and/or annealing it in thepresence of a magnetic field) and then permanently maintaining themagnetization with an undercoat of a layer of antiferromagneticmaterial, or AFM, (layer 23 in the figure). Layer 26, by contrast, is a“free layer” whose direction of magnetization can be readily changed byan external field (such as that associated with a bit at the surface 15of a magnetic disk).

[0007] The structure shown in FIG. 2 is referred to as a bottom spinvalve because the pinned layer is at the bottom. It is also possible toform a ‘top spin valve’ structure where the pinned layer is depositedafter the pinning layer.

[0008] Ultra-thin free layers as well as MR ratio are very effective toobtain high output spin valve GMR heads for over 30 Gb/in² magneticrecording. In general, magneto-resistive devices have a characteristicresponse curve such that their sensitivity initially increases with theapplied field, then is constant with applied field, and then decreasesto zero for even higher fields. It is therefore standard to provide abiasing field to keep the sensor operating in the linear range where itis also at its most sensitive. However, as the free layer thicknessdecreases, it becomes difficult to obtain a controllable bias point,high GMR ratio and good magnetic softness all at the same time.Synthetic antiferromagnets (SyAF) are known to reduce magneto-staticfields in a pinned layer, but a large bias point shift due to sensecurrent fields remains a problem for practical use of an ultra-thin freelayer. To overcome this problem, the spin-filter spin valve (SFSV) wasinvented.

[0009] In a SFSV, the free layer is placed between the Cu spacer and anadditional high-conductance-layer (HCL). SFSV reduces sense currentfields in the free layer by shifting the sense current center toward thefree layer, resulting in a smaller bias point shift by sense currentfields. High GMR ratio is maintained even in the ultra-thin free layerbecause the HCL improves the mean free path of a spin-up electron whilemaintaining the mean free path difference between spin-up and spin-downelectrons.

[0010] As discussed earlier, spin valve GMR heads may be either top orbottom types. The GMR sensor track is defined by a patternedlongitudinal biasing layer in the form of two bias stripes. These arepermanently magnetized in a direction parallel to the surface. Theirpurpose is to prevent the formation of multiple magnetic domains in thefree layer. The most commonly used longitudinal bias for the bottom spinvalve is with contiguous (abutted) junction hard bias. The problem withthe abutted junction is the existence of a “dead zone” at the sensorends. A MR sensor track defined by continuous spacer exchange bias(similar to that for the DSMR) does not have the “dead zone”. This maybe critical for a very narrow track for ultra-high density recordingapplication.

[0011] A routine search of the prior art was performed. The followingreferences of interest were found. U.S. Pat. No. 5,637,235 (Kim et al.)shows a SV with a capping layer. U.S. Pat. No. 5,896,252 (Kanai) shows aSV with a free magnetic layer composed of a CoFe and NiFe sublayers.while U.S. Pat. No. 5,648,885 (Nishioka et al.) teaches a SV with CoFefree layer.

SUMMARY OF THE INVENTION

[0012] It has been an object of the present invention to provide aspin-filter synthetic antiferromagnetic bottom spin valve that issuitable for ultra-high density magnetic recording applications.

[0013] Another object of the invention has been to provide suitablelongitudinal biasing leads for this structure.

[0014] A further object of the invention has been to provide processesfor the manufacture of these structures.

[0015] These objects have been achieved in a structure made up thefollowing layers:

[0016] NiCr/MnPt/CoFe/Ru/CoFe/Cu/(free layer)/Cu/Ta or TaO. A keyfeature is that the free layer is made of thin CoFe plus a CoFe/NiFecomposite layer in which CoFe is thinner than NiFe. Experimental dataconfirming the effectiveness of this structure is provided, togetherwith a method for manufacturing it and the longitudinal bias leads.

BRIEF DESCRIPTION OF THE DRAWINGS

[0017]FIG. 1 is a schematic representation of a read-write head for amagnetic disk system.

[0018]FIG. 2 shows the cross-sectional structure of a spin valveaccording to the teachings of the prior art.

[0019]FIG. 3 shows the cross-sectional structure of a spin-filter spinvalve according to the teachings of the present invention.

[0020]FIG. 4 illustrates how the structure of FIG. 3 is modified inorder to apply longitudinal bias leads to it.

[0021]FIG. 5 shows the structure of FIG. 3 after longitudinal bias leadshave been added to it.

[0022]FIG. 6 shows a plan view of the structure of which FIG. 5 is across-section.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0023] Relative to NiFe, sputter-etching of tantalum or tantalum oxide(TaO) is 3 times slower. In the present invention, the Ta or TaO cappinglayer of the bottom spin valve can be removed by using a carbontetrafluoride reactive ion etching (RIE) process. The process forsputter etching the underlying Cu and partially etching of NiFe iscontrollable. These factors cause our process for forming an ultra-thinfree layer bottom spin valve to be suitable for manufacturing.

[0024] Advantages of the processes and structures that we will disclosebelow include the following:

[0025] Bottom spin valves made by this invention have larger outputsignal amplitude.

[0026] The process for sputter-etching of the underlying Cu and(partially) etching NiFe for the continuous spacer exchange bias iscontrollable.

[0027] With the above design considerations in mind, we have worked outa structure and fabrication process to form a SF-SyAF bottom spin valvehead with a very thin free layer. The GMR sensor track is defined byusing a continuous exchange spacer bias.

[0028] Using the CVC GMR sputtering system, bottom SF-SyAF spin valveshaving:

[0029] NiCr/MnPt/CoFe(l)/Ru/CoFe(2)/Cu/CoFe+NiFe(free layer)/Cu/Ta orTaO/configuration were made. Free layers of the present work are made ofa very thin CoFe/NiFe composite layer. TaO in the present structure isformed by first depositing a thin (e.g. 10-15 Å) Ta film on the NiFefree layer, and then oxidizing it by oxygen plasma ashing.

[0030] We now describe the process of the present invention for bothspin valves and read heads. In the course of this description, thestructure of the present invention will also become clear.

[0031] Referring now to FIG. 3, the process for manufacturing a spinvalve begins with the provision of substrate 21 onto which there isdeposited magneto-resistance-enhancing seed layer 22. Pinning layer 33is then deposited onto layer 22. This pinning layer is between about 100and 200 Angstroms thick. Our preferred material has been MnPt butsimilar materials such as InMn, MnNi, ot MnPtPd could also have beenused. This is followed by pinned layer 34, a synthetic antiferromagneticmaterial. that is actually a laminate details not shown), deposited asfollows:

[0032] first a layer of cobalt-iron, between about 12 and 25 Angstromsthick, then a layer of ruthenium, between about 6 and 9 Angstroms thick,and last a second layer of cobalt-iron, between about 12 and 25Angstroms thick. It is a requirement that these two cobalt-iron layersdiffer in thickness by between about 2 and 10 Angstroms.

[0033] Next, non-magnetic copper spacer layer 25, between about 18 and25 Angstroms thick, is deposited onto layer 34.

[0034] In a key feature of the invention, free layer 35 is thendeposited. This free layer is actually a composite of a cobalt-ironlayer, having a thickness between about 3 and 15 Angstroms and anickel-iron layer that is between about 10 and 35 Angstroms thick, theCoFe being deposited first.

[0035] Next, high conductance copper layer 36, between about 5 and 15Angstroms thick, is deposited on free layer 35. This is followed by thedeposition of a specular reflection layer of either tantalum that may beleft unchanged at a thickness between about 10 and 20 Angstroms or thatis converted to tantalum oxide layer 37 through plasma oxidation, asdiscussed earlier. This tantalum oxide layer has a thickness betweenabout 15 and 30 Angstroms. Then, capping layer of aluminum oxide 38,between about 100 and 300 Angstroms thick, is deposited on layer 37.

[0036] The process is then completed by annealing. This takes the formof heating in the presence a magnetic field of between about 5,000 and10,000 Oe, in a transverse direction, at a temperature between about 250and 280° C. for between about 5 and 10 hours.

[0037] The process for manufacturing a read head begins with theprovision of a bottom spin valve structure that includes an ultra-thinspecular free layer as described immediately above. First, capping layer38 is removed by wet etching, thereby uncovering tantalum or tantalumoxide layer 37 onto which a layer of photoresist (comprising solubleunderlayer 40 a and insoluble top layer 40 b), suitable for laterlift-off, is applied and then patterned to define the shape of a pair ofconductor leads. This can be seen in FIG. 4.

[0038] Then, all tantalum or tantalum oxide that is not protected byphotoresist is removed by reactive etching in carbon tetrafluoride. Thisresults in the uncovering of high conductance copper layer 15, whichlayer serves as an effective etch stop layer. Etching, bysputter-etching, then continues until all uncovered high conductancecopper 36 has been removed, as well as a certain amount of nickel ironfrom free layer 35. The removed nickel iron is then refilled with alayer of ferromagnetic material such as NiFe or CoFe, to a slightlygreater thickness than the removed material (because of some uncertaintyin the thickness control). This is followed by deposition of a layer ofantiferromagnetic material.

[0039] Continuing our reference to FIG. 4, biasing layer 41 is thendeposited on layer 35 (i.e. the refilled nickel-iron) to a thicknessbetween about 100 and 150 Angstroms. The biasing layer may be either anexchange bias layer made of manganese-platinum or a similar materialsuch as InMn, MnNi, or MnPtPd. This is followed by deposition of a layerof conductive material 42. Our preferred material for the layer ofconductive material has been Ta/Au/Ta, but similar materials, such asCr/Rh/Cr could also have been used. It is deposited to a thicknessbetween about 300 and 400 Angstroms.

[0040] At this point the liftoff process is invoked so that allphotoresist, together with all material on the resist's surface, isremoved, giving the structure the appearance shown in FIG. 5. A planview, of which FIG. 5 is a cross-section, is shown in FIG. 6.

[0041] The process is completed by annealing. This involves heating inthe presence a magnetic field of between about 100 and 200 Oe in thelongitudinal direction, at a temperature between about 250 and 280° C.for between about 2 and 5 hours.

Experimental Verification of the Invention

[0042] For comparison purposes, SF-SyAF top spin valveshaving:NiCr/Cu/NiFe+CoFe (free layer)/Cu/CoFe1/Ru/CoFe2/MnPt/NiCrconfigurations with equivalent layer thicknesses were also made.

[0043] To characterize free layer anisotropy, free layer structures madeof 55 NiCr/20 Cu/2 CoFe-34 NiFe/15 Cu/TaO/Al₂O₃ and 55 NiCr/15 Cu/34NiFe-2 CoFe/20 Cu/NiCr, respectively (where all numbers are thicknessesin Angstroms), for the bottom and top SFSV were also studied.

[0044] After forming free layer and GMR stacks, the deposited structureswere first given a standard 6000 Oe transverse field 280° C.-5 hrsannealing. The high field annealing set up the pinned layer direction.After removing Al₂O₃ capping by wet etching, the GMR and the free layerstacks, were further given a low field (100 Oe) 250° C.-5 hrs annealingto reset the free layer in the sensor direction. This low fieldannealing was used to simulate the exchange bias annealing process.

[0045] Comparisons of the top and bottom spin valve free layer magneticproperties are illustrated in Table I. TABLE I Free layer structure:80.9% NiFe B_(s) H_(c) H_(k) R_(s) Dr/r Oe to close HACZB55/Cu15/NiFe32/CoFe3/Cu20/CZB50 Top 0.28 10.23 15.84 24.12 0.54 9 Oe,CZB55/Cu20/CoFe3/NiFe32/Cu15/TaO Bottom 0.28  6.77 14.67 25.85 0.65 4Oe

[0046] As illustrated in TABLE I, the free layer of the bottom spinvalve shows softer magnetic properties (i.e. lower H_(c) and H_(k)) thanthat of the top spin valve. To close the hard axis (HA) loops for thefree layers, applied longitudinal fields of 9 and 4 Oe are needed forthe top and the bottom spin valve respectively.

[0047] Magnetic performance properties of the top and bottom SF-SyAFspin valves are listed in TABLE II. For the top spin valve with (55NiFe/5 CoFe) free layer, GMR ratio (Dr/r)=9.54% and output amplitude(Dr)=1.20 ohm/sq. Dr/r and Dr for the bottom spin valve are 10% higher.Also H_(c) and H_(k) are lower. TABLE II Structure: (80.9% NiFe/MP 43%-2mt) B_(s) H_(c) H_(e) H_(k) R_(s) Dr/r Dr FOMCZB55/Cu15/NiFe55/CoFe5/Cu20/CoFe23/Ru 1 0.52 8.47 16.2 9.94 12.6 9.541.20 0.65 7.5/CoFe18/MP150/CZB30/Al₂O₃CZB55/MP150/CoFe18/Ru7.5/CoFe23/Cu20/ 2 0.51 5.34 13.5 6.77 12.7 10.51.33 0.73 CoFe5/NiFe55/Cu15/Ta10/OL/Al₂O₃CZB55/Cu15/NiFe34/CoFe2/Cu19/CoFe23/Ru 3 0.28 7.20 13.5 7.44 14.6 9.741.42 1.33 7.5/CoFe18/MP150/CZB30/Al₂O₃CZB55/MP150/CoFe18/Ru7.5/CoFe23/Cu20/ 4 0.29 6.05 4.56 2.20 15.5 10.71.66 1.45 CoFe2/NiFe34/Cu15/Ta10/OL/Al₂O₃CZB55/MP150/CoFe18/Ru7.5/CoFe23/Cu20/ 5 0.27 5.92 8.53 4.07 15.9 12.82.03 1.89 CoFe10/NiFe20/Cu10/Ta10/Al₂O₃

[0048] For ultra-high density recording, the free layer of the bottomspin valve is made of a very thin CoFe/NiFe composite layer having amagnetic moment equivalent to that of a 37 Å thick NiFe layer. See Cell3 and Cell 4/Cell 5, respectively, for the top and the bottom spinvalves with ultra-thin free layer. Figure-of-merit (FOM) for the (2 ÅCoFe/34 Å NiFe) spin valves is about 2×greater than that with (5 ÅCoFe/55 Å NiFe) free layer. The difference between Cell 4 and Cell 5, isthat the composite free layer in cell 5 has a thicker CoFe component.The FOM for the (10 Å CoFe/20 Å NiFe) spin valve with 10 Å Cu HCL isabout 2.5×greater than that of the (5 Å CoFe/55 Å NiFe)spin valve with15 Å Cdu HCL. Besides having greater FOM, the bottom spin valve hasshown softer magnetic properties than the top spin valve. These resultsindicate that a bottom spin valve head gives higher sensor sensitivityto yield even higher output signal.

[0049] While the invention has been particularly shown and describedwith reference to the preferred embodiments thereof, it will beunderstood by those skilled in the art that various changes in form anddetails may be made without departing from the spirit and scope of theinvention:

What is claimed is:
 1. A process for manufacturing a specular free layerbottom spin valve, comprising the sequential steps of: providing asubstrate and depositing thereon a magneto-resistance-enhancing seedlayer; on said magneto-resistance-enhancing seed layer, depositing apinning layer; on said pinning layer, depositing a syntheticantiferromagnetic pinned layer; on the synthetic antiferromagneticpinned layer, depositing a non-magnetic copper spacer layer; on thespacer layer depositing a free layer that further comprises acobalt-iron layer that is less than 10 Angstroms thick and a nickel-ironlayer that is between 10 and 30 Angstroms thick; on the free layer,depositing a high conductance copper layer; on the high conductancecopper layer, depositing a specular reflection layer; on the specularreflection layer, depositing a capping layer of aluminum oxide; and thenannealing.
 2. The process described in claim 1 wherein said specularreflection layer is tantalum or tantalum oxide.
 3. The process describedin claim 1 wherein said pinning layer is between about 70 and 200Angstroms thick and is selected from the group consisting of MnPt, InMn,MnNi, and MnPtPd.
 4. The process described in claim 1 wherein the stepof depositing the synthetic antiferromagnetic pinned layer furthercomprises: depositing a first layer of cobalt-iron, between about 12 and25 Angstroms thick; depositing a layer of ruthenium, between about 6 and9 Angstroms thick; and then depositing a second layer of cobalt-iron,between about 12 and 25 Angstroms thick, said first and secondcobalt-iron layers differing in thickness by between about 2 and 10Angstroms
 5. The process described in claim 1 wherein the non-magneticcopper spacer layer is deposited to a thickness between about 18 and 25Angstroms and the high conductance copper layer is deposited to athickness between about 5 and 15 Angstroms.
 6. The process described inclaim 2 wherein the step of depositing the tantalum oxide layer furthercomprises depositing a layer of tantalum and then ashing it in an oxygenplasma, thereby forming the tantalum oxide layer to a thickness betweenabout 20 and 30 Angstroms.
 7. The process described in claim 2 whereinthe tantalum layer is deposited to a thickness between about 10 and 15Angstroms.
 8. The process described in claim 1 wherein the step ofannealing further comprises heating in the presence a magnetic field ofbetween about 6,000 and 10.000 Oe, in a transverse direction, at atemperature between about 250 and 280° C. for between about 5 and 10hours.
 9. A process for manufacturing a read head, comprising: providinga bottom spin valve that includes a specular free layer, said free layerfurther comprising a cobalt-iron layer that is less than 3 Angstromsthick and a nickel-iron layer that is between 30 and 40 Angstroms thick,a specular reflection layer, and a capping layer; wet etching to removethe capping layer, thereby uncovering the specular reflection layer; onthe specular reflection layer, forming a photoresist lift-off pattern ofconductor leads, by means of reactive etching in carbon tetrafluoride,removing all unprotected portions of the specular reflection layer,thereby uncovering a high conductance copper layer, said copper layerserving as an etch stop layer; by sputter-etching, removing alluncovered high conductance copper and a portion of said nickel iron freelayer; replacing said removed portion of the nickel-iron free layer; onthe replaced nickel-iron layer, depositing a biasing layer; on said biaslayer, depositing a layer of conductive material; removing thephotoresist, thereby forming said conductor leads; and then annealing.10. The process described in claim 9 wherein said specular reflectionlayer is tantalum or tantalum oxide.
 11. The process described in claim9 wherein the biasing layer is an exchange bias layer selected from thegroup consisting of MnPt, InMn, MnNi, and MnPtPd.
 12. The processdescribed in claim 9 wherein the biasing layer is deposited to athickness between about 70 and 200 Angstroms.
 13. The process describedin claim 9 wherein the layer of conductive material is selected from thegroup consisting of Ta/Au/Ta and Cr/Rh/Cr and is deposited to athickness between about 300 and 400 Angstroms.
 14. The process describedin claim 9 wherein the step of annealing further comprises heating inthe presence of a longitudinal magnetic field of between about 100 and200 Oe, at a temperature between about 250 and 280° C. for between about2 and 5 hours.
 15. A specular free layer bottom spin valve, comprising amagneto-resistance-enhancing seed layer on a substrate; on saidmagneto-resistance-enhancing seed layer, a pinning layer; on saidpinning layer, a synthetic antiferromagnetic pinned layer; on thesynthetic antiferromagnetic pinned layer, a non-magnetic copper spacerlayer; on the spacer layer, a free layer that further comprises acobalt-iron/nickel-iron composite that is less than 10 Angstroms thickand a nickel-iron layer that is between 10 and 30 Angstroms thick; onthe free layer, a high conductance copper layer; on the high conductancecopper layer, a specular reflection layer; and on the specularreflection layer, a capping layer of aluminum oxide.
 16. The processdescribed in claim 15 wherein said specular reflection layer is tantalumor tantalum oxide.
 17. The spin valve described in claim 15 wherein saidpinning layer is between about 70 and 200 Angstroms thick and isselected from the group consisting of MnPt, InMn, MnNi, and MnPtPd. 18.The spin valve described in claim 15 wherein the syntheticantiferromagnetic pinned layer further comprises: a first layer ofcobalt-iron, between about 12 and 25 Angstroms thick; a layer ofruthenium, between about 6 and 9 Angstroms thick on said first layer;and a second layer of cobalt-iron, between about 12 and 25 Angstromsthick, on the ruthenium, said first and second cobalt-iron layersdiffering in thickness by between about 2 and 10 Angstroms
 19. The spinvalve described in claim 15 wherein the non-magnetic copper spacer layerhas a thickness between about 18 and 25 Angstroms and the highconductance copper layer has a thickness between about 5 and 15Angstroms.
 20. The spin valve described in claim 16 wherein the tantalumlayer has a thickness between about 10 and 15 Angstroms and the tantalumoxide layer has a thickness between about 15 and 30 Angstroms.
 21. Aread head, comprising: a bottom spin valve that includes a specular freelayer, said free layer further comprising a cobalt-iron layer that isless than 10 Angstroms thick and a nickel-iron layer that is between 10and 30 Angstroms thick; on the free layer, a high conductance copperlayer everywhere except in a lead area; on the high conductance copperlayer, a specular reflection layer; on the nickel-iron layer in the leadarea, a biasing layer; and on said biasing layer, a layer of conductivematerial.
 22. The process described in claim 21 wherein said specularreflection layer is tantalum or tantalum oxide.
 23. The read headdescribed in claim 21 wherein the biasing layer is an exchange biaslayer selected from the group consisting of MnPt, InMn, MnNi, andMnPtPd.
 24. The read head described in claim 21 wherein the biasinglayer is a hard bias layer selected from the group consisting of CoPtand CoPtCr.